| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies BSP372NH6327XTSA1 is an N-Channel MOSFET belonging to the OptiMOS series. It is designed for various electronic applications requiring efficient switching and power management.
Key electrical specifications include a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 1.8A at 25°C. The on-resistance (Rds On) is specified at a maximum of 230mOhm at 1.8A and 10V gate drive. The device also features a gate charge (Qg) of 14.3 nC maximum at 10V and an input capacitance (Ciss) of 329 pF maximum at 25V.
The operating temperature range for this MOSFET is from -55°C to 150°C. It has a maximum power dissipation of 1.8W at ambient temperature.
This component is packaged in a TO-261-4, TO-261AA (PG-SOT223-4) package, designed for surface mounting. The Moisture Sensitivity Level (MSL) is 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The maximum continuous drain current is 1.8A at 25°C ambient temperature.
The maximum Rds(on) is 230mOhm at 1.8A drain current and 10V gate drive.
The BSP372 is supplied in a TO-261-4 (TO-261AA) surface-mount package, with supplier device package PG-SOT223-4.
The device operates over a junction temperature range of -55°C to 150°C.
The maximum power dissipation is 1.8W at ambient temperature.
The maximum gate charge is 14.3nC at Vgs = 10V.