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892 pcs
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892 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MagnaChip Semiconductor MDC0531EURH is a dual N-channel MOSFET featuring a maximum drain-source voltage of 30V and a continuous drain current of 8A. It is designed for low voltage applications, providing low on-state resistance and fast switching performance.
This MOSFET comes in a compact 8-pin TSSOP surface-mount package with dimensions of 4.5mm width, 3.1mm length, and 1.05mm height. The maximum drain-source on-resistance is rated at 23 mΩ, with a typical gate charge of 10.7 nC at 4.5V Vgs. The operating temperature range is from -55°C to +150°C.
Key electrical characteristics include a maximum gate threshold voltage of 1.5V and a maximum power dissipation of 1.7W. The transistor configuration is common drain, and it supports a maximum gate-source voltage of ±12V. The material is Silicon (Si), and it contains two elements per chip.
This component is suitable for various electronic applications requiring efficient power switching and control. Its surface-mount package facilitates integration into compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.44 | $1.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 8 A.
The maximum drain-source voltage is 30 V.
The package type is TSSOP.
The maximum drain source on-resistance is 23 mΩ.
The operating temperature range is from -55 °C to +150 °C.