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LMUN5212DW1T1G The LMUN5212DW1T1G is a Dual Bias Resistor Transistor from LRC Leshan Radio Co Ltd, featuring NPN silicon transistors with monolithic bias resistor networks. It is housed in a space-saving SOT-363 package.
Mfr Part #:

LMUN5212DW1T1G

Available from 3 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LMUN5212DW1T1G is a Dual Bias Resistor Transistor from LRC Leshan Radio Co Ltd, featuring NPN silicon transistors with monolithic bias resistor networks. It is housed in a space-saving SOT-363 package.
✓ Total Stock: 158,067 pcs
$ Price Range: $0.45

LMUN5212DW1T1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
144,000 pcs
On Request
144000 pcs On Request 1 On Request On Request 19+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
12,754 pcs
On Request
12754 pcs On Request 1 On Request On Request 20+ On Request On Request
Rayichip ✓
Non-Authorised Inventory information
1,313 pcs
On Request
1313 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

LMUN5212DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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LMUN5212DW1T1G Description

Short technical summary and product information.

The LMUN5212DW1T1G is a Dual Bias Resistor Transistor (BRT) from LRC Leshan Radio Co Ltd, designed for low power surface mount applications where board space is limited. This component integrates two NPN silicon transistors with monolithic bias resistor networks, simplifying circuit design and reducing component count.

 

Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 50 Vdc and a maximum Collector Current (IC) of 100 mAdc. The integrated bias resistor network consists of R1 = 10 KΩ and R2 = 47 KΩ. The device is supplied in a compact SC-88/SOT-363 package, ideal for high-density PCB layouts.

 

Thermal characteristics include a total device dissipation (PD) of 385 mW at 25°C when both junctions are heated, with a junction-to-ambient thermal resistance (RθJA) of 325 °C/W. The operating and storage temperature range is -55°C to +150°C.

 

This transistor simplifies circuit design by eliminating the need for external resistor bias networks, making it suitable for various low-power applications.

LMUN5212DW1T1G Quick Information

Product Type: Dual Bias Resistor Transistor
Series: LMUN5211DW1T1 Series
Canonical Name: Dual Bias Resistor Transistor
Subcategory: Dual Bias Resistor Transistor

LMUN5212DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LMUN5212DW1T1G Estimated Pricing

Qty Low High
1+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

LMUN5212DW1T1G Features

  • Dual NPN transistors with integrated resistors
  • 50 Vdc collector-emitter voltage rating
  • 100 mAdc maximum collector current
  • Integrated resistors: R1=10K, R2=47K
  • Compact SOT-363 surface mount package

LMUN5212DW1T1G Applications

  • Ideal for low power applications
  • Reduces board space and component count
  • Simplifies circuit design
  • Suitable for high-density PCBs

LMUN5212DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the LMUN5212DW1T1G?

The maximum collector-emitter voltage (VCEO) for the LMUN5212DW1T1G is 50 Vdc.

What is the maximum collector current for the LMUN5212DW1T1G?

The maximum collector current (IC) for the LMUN5212DW1T1G is 100 mAdc.

What are the integrated resistor values in the LMUN5212DW1T1G?

The LMUN5212DW1T1G has integrated resistors with R1 = 10 KΩ and R2 = 47 KΩ.

What package type is the LMUN5212DW1T1G supplied in?

The LMUN5212DW1T1G is supplied in the SC-88/SOT-363 package.

What is the total device dissipation at 25°C for the LMUN5212DW1T1G?

The total device dissipation (PD) is 385 mW at 25°C when both junctions are heated.

What is the operating temperature range for the LMUN5212DW1T1G?

The junction and storage temperature range for the LMUN5212DW1T1G is -55°C to +150°C.

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