HEF4053BT653
NXP Semiconductors
The NXP Semiconductors HEF4053BT653 is a triple single-pole double-throw analog switch. It operates across a wide supply voltage range and is specified for extended temperatures.
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358,926 pcs
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358926 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
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150,000 pcs
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150000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,320 pcs
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1320 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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605 pcs
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605 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N7002P from NXP Semiconductors is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a maximum drain-source voltage of 60V and a continuous drain current of 360mA at 25°C with a VGS of 10V. The device features a low drain-source on-state resistance of 1.6Ω maximum under specific test conditions. It is also logic-level compatible and offers very fast switching speeds.
This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. Its AEC-Q101 qualification indicates suitability for automotive applications.
The component is supplied in a SOT23 package, a common surface-mount form factor. The mounting type is surface mount.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the 2N7002P is 60V.
The continuous drain current is 360mA at 25°C with a VGS of 10V.
The maximum on-state resistance is 1.6Ω.
The 2N7002P is available in a SOT23 package.
Yes, the 2N7002P is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is Unaffected.
