LMUN2233LT1G The LMUN2233LT1G is an NPN bipolar junction transistor from LRC Leshan Radio Co Ltd. It features a 50V collector-emitter breakdown voltage and a 100mA maximum collector current.
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LMUN2233LT1G

Available from 3 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LMUN2233LT1G is an NPN bipolar junction transistor from LRC Leshan Radio Co Ltd. It features a 50V collector-emitter breakdown voltage and a 100mA maximum collector current.
Total Stock: 3,049 pcs
$ Price Range: $0.01

LMUN2233LT1G Available from 3 distributors

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1,655 pcs
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1,383 pcs
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LMUN2233LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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LMUN2233LT1G Description

Short technical summary and product information.

The LMUN2233LT1G is a single NPN bipolar junction transistor (BJT) manufactured by LRC Leshan Radio Co Ltd. This component is designed for general-purpose switching and amplification applications.

 

Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. The transistor is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.

 

Its NPN configuration and specified voltage and current ratings make it a versatile component for various electronic circuits. The SOT-23 package facilitates easy integration into printed circuit boards using surface-mount technology.

LMUN2233LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: LMUN2233LT1G NPN Transistor
Subcategory: Single

LMUN2233LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LMUN2233LT1G Estimated Pricing

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1+ $0.01 $0.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

LMUN2233LT1G Features

  • NPN bipolar junction transistor design.
  • Maximum collector current of 100mA.
  • Collector-emitter breakdown voltage 50V.
  • Surface mount SOT-23 package.
  • RoHS3 compliant and REACH unaffected.

LMUN2233LT1G Applications

  • Signal amplification in audio preamplifier stages.
  • Switching low-current DC loads up to 100mA.
  • Driver for small relays or indicator LEDs.
  • Logic level shifting for 3.3V to 5V interfaces.
  • General purpose switching and amplification circuits.

LMUN2233LT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the LMUN2233LT1G?

The collector-emitter breakdown voltage is 50V.

What is the maximum collector current for the LMUN2233LT1G?

The maximum collector current is 100mA.

What type of transistor is the LMUN2233LT1G?

The LMUN2233LT1G is an NPN transistor.

What package type is the LMUN2233LT1G supplied in?

The LMUN2233LT1G is supplied in a SOT-23 package.

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