NSVDTC123EM3T5G
On Semiconductor
The On Semiconductor NSVDTC123EM3T5G is an NPN pre-biased bipolar transistor. It offers a 50V collector-emitter breakdown voltage and 100mA maximum collector current.
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2,471 pcs
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2471 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Leshan LDTC114EET1G is an NPN pre-biased bipolar transistor designed for general-purpose applications. It features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.
This transistor comes in an SC-89 package, making it suitable for space-constrained designs. Its pre-biased configuration simplifies circuit design by integrating the biasing resistors.
With a maximum power dissipation of 200mW, the LDTC114EET1G is a reliable component for various electronic circuits requiring a pre-biased NPN transistor. Its specifications make it a versatile choice for both prototyping and production.
Key electrical characteristics include a 100mA collector current and a 50V collector-emitter breakdown voltage. The SC-89 package ensures ease of integration into surface-mount designs.
| Qty | Low | High |
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| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the LDTC114EET1G is 100mA.
The collector-emitter breakdown voltage (Vceo) for the LDTC114EET1G is 50V.
The LDTC114EET1G is available in the SC-89 package.
The LDTC114EET1G is an NPN pre-biased bipolar transistor.