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NSVDTC123EM3T5G The On Semiconductor NSVDTC123EM3T5G is an NPN pre-biased bipolar transistor. It offers a 50V collector-emitter breakdown voltage and 100mA maximum collector current.
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NSVDTC123EM3T5G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVDTC123EM3T5G is an NPN pre-biased bipolar transistor. It offers a 50V collector-emitter breakdown voltage and 100mA maximum collector current.
✓ Total Stock: 49,000 pcs
$ Price Range: $0.99

NSVDTC123EM3T5G Available from 2 distributors

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✓ Non-Authorised
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48,000 pcs
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Braun Electronic Components ✓
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1,000 pcs
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1000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSVDTC123EM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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AEC Qualified
Automotive Grade
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Power Dissipation
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NSVDTC123EM3T5G Description

Short technical summary and product information.

The NSVDTC123EM3T5G from On Semiconductor is a pre-biased NPN bipolar junction transistor (BJT). This component is designed for various electronic applications requiring a reliable switching or amplification element.

 

Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. It features integrated base and emitter resistors with values of 2.2 kOhms each, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 8 at 5mA and 10V, with a maximum saturation voltage of 250mV at 5mA and 10mA. The maximum collector cutoff current is rated at 500 nA, and the maximum power dissipation is 260 mW.

 

This device is supplied in a compact SOT-723 surface-mount package, making it suitable for space-constrained applications. The mounting type is surface mount, and it is provided on tape and reel.

NSVDTC123EM3T5G Quick Information

Product Type: Pre-Biased Bipolar Transistor
Series: DTC123E
Canonical Name: NPN Pre-Biased Bipolar Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

NSVDTC123EM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVDTC123EM3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVDTC123EM3T5G Features

  • NPN pre-biased bipolar transistor.
  • 50 V collector-emitter breakdown voltage.
  • 100 mA maximum collector current.
  • Integrated 2.2 kOhm resistors.
  • SOT-723 surface-mount package.

NSVDTC123EM3T5G Applications

  • Used in digital logic level shifting.
  • Ideal for low-power switching circuits.
  • Suitable for relay and solenoid drivers.
  • Common in LED driver applications.

NSVDTC123EM3T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What are the integrated resistor values in the NSVDTC123EM3T5G?

The base resistor (R1) is 2.2 kΩ and the emitter-base resistor (R2) is 2.2 kΩ.

What is the maximum collector current?

The maximum collector current is 100 mA.

What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 50 V.

What is the package type for this transistor?

It is available in a SOT-723 surface-mount package.

What is the maximum power dissipation?

The maximum power dissipation is 260 mW.

What is the minimum DC current gain?

The minimum DC current gain is 8 at a collector current of 5 mA and collector-emitter voltage of 10 V.

What is the collector-emitter saturation voltage?

The maximum saturation voltage is 250 mV at 5 mA base current and 10 mA collector current.

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