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BCR512E6327 The BCR512E6327 is an NPN Pre-Biased Transistor from Infineon Technologies. It features a 50V collector-emitter breakdown voltage and a 500mA maximum collector current.
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BCR512E6327

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The BCR512E6327 is an NPN Pre-Biased Transistor from Infineon Technologies. It features a 50V collector-emitter breakdown voltage and a 500mA maximum collector current.
✓ Total Stock: 350 pcs
$ Price Range: $165.89

BCR512E6327 Available from 1 distributor

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350 pcs
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BCR512E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation (Max)
Resistance
Tape & Reel
Transistor Type
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BCR512E6327 Description

Short technical summary and product information.

The BCR512E6327 is an NPN Pre-Biased Transistor manufactured by Infineon Technologies. This component is designed for various electronic applications requiring stable current regulation.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It also features a maximum power dissipation of 330mW and a transition frequency of 100MHz. The transistor includes integrated base and emitter base resistors, each with a value of 4.7k Ohms.

 

This device is housed in a compact SOT-23-3 surface-mount package, suitable for space-constrained designs. The tape and reel packaging facilitates automated assembly processes.

BCR512E6327 Quick Information

Product Type: NPN Transistor
Canonical Name: BCR512E6327 NPN Pre-Biased Transistor
Subcategory: NPN Pre-Biased

BCR512E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR512E6327 Estimated Pricing

Qty Low High
1+ $165.89 $165.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR512E6327 Features

  • NPN Pre-Biased transistor type.
  • 50V collector-emitter breakdown voltage.
  • 500mA maximum collector current.
  • 330mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

BCR512E6327 Applications

  • Suitable for low-voltage switching applications.
  • Used in signal amplification circuits.
  • Ideal for transistor-based current regulation.
  • Applicable in surface-mount electronic designs.

BCR512E6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the BCR512E6327?

The collector-emitter breakdown voltage for the BCR512E6327 is 50V.

What is the maximum collector current of the BCR512E6327 transistor?

The maximum collector current for the BCR512E6327 is 500mA.

What is the power dissipation rating for the BCR512E6327?

The maximum power dissipation for the BCR512E6327 is 330mW.

What type of transistor is the BCR512E6327?

The BCR512E6327 is an NPN Pre-Biased transistor.

What package type is the BCR512E6327 available in?

The BCR512E6327 is available in a TO-236-3, SC-59, SOT-23-3 package.

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