JAN2N2222AUA The Microchip JAN2N2222AUA is a single NPN bipolar junction transistor designed for general-purpose applications. It offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA.
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JAN2N2222AUA

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microchip JAN2N2222AUA is a single NPN bipolar junction transistor designed for general-purpose applications. It offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA.
✓ Total Stock: 120 pcs
$ Price Range: $0.99

JAN2N2222AUA Available from 1 distributor

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JAN2N2222AUA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade
Mounting Type
Operating Temperature
Transistor Type

JAN2N2222AUA Description

Short technical summary and product information.

The JAN2N2222AUA from Microchip Technology is a single NPN bipolar junction transistor. It is designed for various electronic applications requiring reliable switching and amplification. Key electrical characteristics include a maximum collector current of 800 mA and a maximum collector-emitter breakdown voltage of 50 V.

 

This transistor features a DC current gain (hFE) minimum of 100 at 150mA and 10V. The maximum power dissipation is rated at 650 mW, and it operates within a wide temperature range of -65°C to 200°C.

 

The JAN2N2222AUA is housed in a surface mount 4-SMD package, making it suitable for compact PCB designs. Its robust specifications and wide operating temperature range make it a versatile component for industrial and commercial applications.

JAN2N2222AUA Quick Information

Product Type: NPN Bipolar Transistor
Series: JAN2N2222
Canonical Name: JAN2N2222AUA NPN Bipolar Transistor
Subcategory: Single NPN

JAN2N2222AUA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JAN2N2222AUA Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JAN2N2222AUA Features

  • NPN bipolar junction transistor.
  • 50V maximum collector-emitter breakdown voltage.
  • 800mA maximum collector current.
  • 650mW maximum power dissipation.
  • Surface mount 4-SMD package.

JAN2N2222AUA Applications

  • General purpose switching applications.
  • Signal amplification circuits.
  • Industrial control systems.
  • Consumer electronics designs.

JAN2N2222AUA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the JAN2N2222AUA?

The maximum collector current is 800 mA.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 50 V.

What is the maximum power dissipation of this transistor?

The maximum power dissipation is 650 mW.

What is the operating temperature range?

The operating junction temperature range is -65°C to 200°C.

What is the package type of the JAN2N2222AUA?

The package is 4-SMD, designed for surface mount mounting.

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