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JANTXV2N5339U3 The Microsemi Corporation JANTXV2N5339U3 is an NPN transistor designed for various electronic applications. It offers a 100V collector-emitter breakdown voltage and a continuous collector current of up to 5A.
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JANTXV2N5339U3

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi Corporation JANTXV2N5339U3 is an NPN transistor designed for various electronic applications. It offers a 100V collector-emitter breakdown voltage and a continuous collector current of up to 5A.
✓ Total Stock: 80 pcs
$ Price Range: $0.99

JANTXV2N5339U3 Available from 1 distributor

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✓ Non-Authorised
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80 pcs
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JANTXV2N5339U3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Transistor Type
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JANTXV2N5339U3 Description

Short technical summary and product information.

The JANTXV2N5339U3 from Microsemi Corporation is a single NPN bipolar junction transistor. It is designed for applications requiring robust performance with a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 5A.

 

This transistor features a high DC current gain (hFE) of at least 60 at 2A and 2V. The collector-emitter saturation voltage is a maximum of 1.2V at 500mA and 5A, ensuring efficient operation. It can operate within a wide temperature range of -65°C to 200°C.

 

The JANTXV2N5339U3 is housed in a TO-276AA package, suitable for surface mounting. Its power dissipation is rated at a maximum of 1W. This component is qualified under MIL-PRF-19500/560, indicating its suitability for military applications.

JANTXV2N5339U3 Quick Information

Product Type: NPN Transistor
Series: JANTXV
Canonical Name: JANTXV2N5339U3 NPN Transistor
Subcategory: Bipolar (BJT) - Single

JANTXV2N5339U3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N5339U3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N5339U3 Features

  • NPN bipolar junction transistor.
  • 100V collector-emitter breakdown voltage.
  • 5A maximum continuous collector current.
  • Wide -65°C to 200°C operating temperature.
  • Surface mount TO-276AA package.

JANTXV2N5339U3 Applications

  • Suitable for high-voltage switching.
  • Used in power amplification circuits.
  • Ideal for military applications.
  • General purpose NPN transistor.

JANTXV2N5339U3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the JANTXV2N5339U3?

The collector-emitter breakdown voltage is 100V.

What is the maximum continuous collector current?

The maximum continuous collector current is 5A.

What is the minimum DC current gain (hFE) at 2A and 2V?

The minimum DC current gain (hFE) is 60 at 2A and 2V.

What is the operating temperature range for this transistor?

The operating temperature range is -65°C to 200°C.

What type of package is the JANTXV2N5339U3 in?

It is supplied in a TO-276AA package for surface mounting.

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