JANTXV2N3421U4 The Microchip Technology JANTXV2N3421U4 is an NPN bipolar junction transistor designed for surface mount applications. It features a breakdown voltage of 80V and a maximum collector current of 3A.
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JANTXV2N3421U4

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microchip Technology JANTXV2N3421U4 is an NPN bipolar junction transistor designed for surface mount applications. It features a breakdown voltage of 80V and a maximum collector current of 3A.
✓ Total Stock: 50 pcs
$ Price Range: $0.99

JANTXV2N3421U4 Available from 1 distributor

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JANTXV2N3421U4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Transistor Type
Vce Saturation (Max)

JANTXV2N3421U4 Description

Short technical summary and product information.

This JANTXV2N3421U4 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for surface mount applications, it comes in a compact 3-SMD, No Lead package.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of up to 3A. The transistor offers a minimum DC current gain (hFE) of 40 at 1A and 2V, with a Vce saturation of 500mV at 200mA and 2A. It has a maximum power dissipation of 1W and operates within a wide temperature range of -65°C to 200°C.

 

The JANTXV2N3421U4 is qualified under MIL-PRF-19500/393, indicating its suitability for demanding applications. Its robust construction and reliable performance make it a suitable choice for various electronic circuits requiring efficient signal amplification or switching.

 

Mounting is facilitated via surface mount technology, making it compatible with automated assembly processes. The component's specifications suggest applications in power management, switching circuits, and signal amplification where high voltage and current handling are necessary.

JANTXV2N3421U4 Quick Information

Product Type: NPN Transistor
Series: JANTXV
Canonical Name: Microchip Technology JANTXV2N3421U4 NPN Transistor
Subcategory: Bipolar (BJT) - Single

JANTXV2N3421U4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTXV2N3421U4 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N3421U4 Features

  • NPN bipolar junction transistor.
  • 80V collector-emitter breakdown voltage.
  • 3A maximum collector current.
  • 1W maximum power dissipation.
  • Surface mountable 3-SMD, No Lead package.

JANTXV2N3421U4 Applications

  • Suitable for power switching applications.
  • Used in signal amplification circuits.
  • Ideal for high voltage designs.
  • Component for military-grade electronics.

JANTXV2N3421U4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JANTXV2N3421U4?

The maximum collector-emitter breakdown voltage is 80V.

What is the maximum collector current rating?

The maximum continuous collector current is 3A.

What is the maximum power dissipation of this transistor?

The maximum power dissipation is 1W.

What is the operating temperature range?

The operating junction temperature range is -65°C to 200°C.

What package type does the JANTXV2N3421U4 use?

It is supplied in a 3-SMD No Lead package (surface mount).

What is the minimum DC current gain (hFE) at 1A?

The minimum hFE is 40 at 1A collector current and 2V Vce.

What is the maximum collector cutoff current?

The maximum collector cutoff current is 300nA.

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