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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFP240 is an N-Channel enhancement mode silicon gate power MOSFET manufactured by N-A. This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Key electrical specifications include a Drain to Source Voltage of 200V, a Continuous Drain Current of 20A at 25°C (12A at 100°C), and a Pulsed Drain Current of 80A. The On-State Resistance (RDS(on)) is a maximum of 180mΩ. It also features a Gate to Source Voltage tolerance of ±20V and a Single Pulse Avalanche Energy Rating of 510mJ.
Designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors, the IRFP240 offers nanosecond switching speeds and high input impedance. It can be operated directly from integrated circuits.
The component comes in a TO-247-3 package and is designed for through-hole mounting. The operating temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage for the IRFP240 is 200V.
The continuous drain current of the IRFP240 at 25°C is 20A.
The maximum On-State Resistance (RDS(on)) for the IRFP240 is 180mΩ.
The operating temperature range for the IRFP240 is -55°C to 150°C.
The IRFP240 is available in a TO-247-3 package.