| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IRFI640G is a Power MOSFET manufactured by International Rectifier. This component features a breakdown voltage of 200V and a maximum on-resistance of 180mΩ. It has an input capacitance of 1.3nF and an isolation voltage of 2500Vrms.
The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 40W. The IRFI640G is supplied in a TO-220-3 package and is designed for through-hole mounting.
Key electrical characteristics include a threshold voltage of 4V, a rise time of 51ns, and a fall time of 36ns. This MOSFET is suitable for various power switching and amplification applications in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFI640G is 200V.
The maximum on-resistance (RDS(on)) for the IRFI640G is 180mΩ.
The IRFI640G operates between -55°C and 150°C.
The IRFI640G is supplied in a TO-220-3 package.
The IRFI640G is designed for through-hole mounting.