| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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54 pcs
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54 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFIBE30G is a MOSFET manufactured by N-A. This component features a high breakdown voltage of 800V and a maximum on-resistance of 3Ω. It operates within a temperature range of -55°C to 150°C.
The device is supplied in a TO-220-3 package, designed for through-hole mounting. The TO-220 FULLPAK construction eliminates the need for additional insulating hardware in commercial-industrial applications, offering high isolation capability and low thermal resistance between the tab and an external heatsink.
Key electrical characteristics include a threshold voltage of 4V, an input capacitance of 1.3nF, and a maximum power dissipation of 35W. The switching characteristics are defined by a rise time of 33ns and a fall time of 30ns. This MOSFET is suitable for various industrial applications requiring robust performance and reliable operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFIBE30G is 800V.
The maximum on-resistance (RDS(on) Max) for the IRFIBE30G is 3Ω.
The IRFIBE30G operates between -55°C and 150°C.
The IRFIBE30G is supplied in a TO-220-3 package.