| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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740 pcs
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740 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Samsung IRF9610 is a P-Channel MOSFET with key electrical characteristics including a drain-source breakdown voltage of -200V and a continuous drain current of 1.8A. It offers a drain-source on-resistance of 3 Ohms and a gate-source breakdown voltage of 20V.
This MOSFET operates within a temperature range of -55°C to +150°C, with a power dissipation of 20W. It features a fall time of 8ns, a rise time of 15ns, and a typical turn-off delay time of 10ns.
The IRF9610 is packaged in a TO-220-3 case and utilizes a through-hole mounting style. It operates in enhancement mode and is configured as a single transistor.
This component is suitable for applications requiring a P-channel MOSFET with these specific voltage, current, and thermal characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 1.8 A.
The drain-source breakdown voltage is -200 V.
The drain-source on-resistance is 3 Ohms.
The minimum operating temperature is -55 °C and the maximum is 150 °C.
The IRF9610 is supplied in a TO-220-3 package.
The IRF9610 is mounted using the through-hole method.