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TK8A50D The Toshiba TK8A50D is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source breakdown voltage and 8A continuous drain current.
Mfr Part #:

TK8A50D

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK8A50D is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source breakdown voltage and 8A continuous drain current.
✓ Total Stock: 24,796 pcs

TK8A50D Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
24,031 pcs
On Request
24031 pcs On Request 1 On Request On Request 1334+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
765 pcs
On Request
765 pcs On Request 1 On Request On Request 15+ On Request On Request
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TK8A50D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK8A50D Description

Short technical summary and product information.

The Toshiba TK8A50D is an N-Channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 8A. It features a low drain-source on-resistance of 850mOhms and a gate-source threshold voltage of 2V.

 

This MOSFET operates with a gate-source voltage of 10V and has a power dissipation rating of 40W. It is constructed using Silicon technology and has a channel mode of enhancement.

 

The TK8A50D is packaged in a SC-67-3 case and is designed for through-hole mounting. The dimensions are 15mm in height, 10mm in length, and 4.5mm in width. The factory pack quantity is 2500 units, supplied on a reel.

TK8A50D Quick Information

Product Type: MOSFET
Series: Tk8a50d
Canonical Name: Toshiba TK8A50D N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

TK8A50D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK8A50D Features

  • 500V drain-source breakdown voltage.
  • 8A continuous drain current.
  • 850mOhms drain-source on-resistance.
  • Through-hole mounting package.
  • N-Channel enhancement mode.

TK8A50D Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Ideal for motor control applications.
  • Applicable in general purpose power applications.

TK8A50D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the TK8A50D MOSFET?

The drain-source breakdown voltage is 500V.

What is the continuous drain current for the TK8A50D?

The continuous drain current is 8A.

What is the Rds On for the TK8A50D MOSFET?

The Rds On is 850mOhms.

What is the gate-source threshold voltage of the TK8A50D?

The gate-source threshold voltage is 2V.

What is the maximum operating temperature for the TK8A50D?

The maximum operating temperature is 150C.

What is the power dissipation of the TK8A50D?

The power dissipation is 40W.

How is the TK8A50D MOSFET packaged?

The TK8A50D is packaged in a SC-67-3 case for through-hole mounting and is supplied on a reel.

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