| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43,325 pcs
|
43325 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The STMicroelectronics STW60N10 is a high-performance N-Channel MOSFET designed for various power applications. It features a drain-source breakdown voltage of 100V and a continuous drain current capability of 60A, with a low drain-source on-resistance of 50mOhms.
This MOSFET operates with a gate-source voltage range of -20V to +20V and has a power dissipation rating of 200W. The device is constructed using Silicon technology and operates in enhancement mode. Its operating temperature range spans from -65°C to +175°C, making it suitable for demanding environments.
The STW60N10 is mounted using a through-hole method and comes in a TO-247-3 package. Its configuration is single, and it belongs to the MDmesh K5 series. This component is ideal for applications requiring robust power switching capabilities.
100V.
TO-247-3 through hole.
-65°C to +175°C.
60A.
50mOhms.
N-Channel.
MDmesh K5.