IRF7413TRPBF
Infineon
The Infineon IRF7413TRPBF is an N-Channel Power MOSFET designed for efficient and reliable operation. It features a 30V drain-to-source voltage and a continuous drain current of 13A.
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749 pcs
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749 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The IRF7413TRPBF is a single N-channel Power MOSFET manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area, combined with fast switching speeds and a ruggedized device design for efficient and reliable operation.
Key electrical specifications include a 30V drain-to-source voltage (Vds), a continuous drain current (Ids) of 13A, and a low ON-resistance (Rds) of 0.011 Ohms. The threshold voltage is 3V, and the input capacitance (Ciss) is 1800pF at 25V Vds. It offers a rise time of 50 ns and a fall time of 46 ns.
This MOSFET is housed in a SOIC-8 surface-mount package. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. The device is designed for vapor phase, infrared, or wave soldering techniques, making it suitable for various power applications where efficient and reliable performance is critical.
30V.
13A.
0.011Ω.
SOIC-8.
-55°C to 150°C.
3V.
Rise time 50ns, fall time 46ns.