| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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749 pcs
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749 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The IRF7413TRPBF from Infineon is a single N-channel Power MOSFET designed for efficient and reliable operation. It utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area, combined with fast switching speeds.
Key electrical specifications include a 30V drain-to-source voltage (Vds) and a continuous drain current (Ids) of 13A. The ON-resistance (Rds(on)) is a low 0.011 Ohms. The gate threshold voltage (Vgs(th)) is 3V. Input capacitance (Ciss) is 1800pF at 25V Vds, with a rise time of 50ns and a fall time of 46ns.
This MOSFET is housed in a surface-mount SOIC-8 package. Its operating temperature range is from -55°C to 150°C. The power dissipation is rated at 2.5W (Ta). The package is designed for various soldering techniques, including vapor phase, infrared, or wave soldering.
This component is suitable for a wide variety of power applications where efficient and reliable operation is critical. Its design facilitates reduced board space when multiple devices are used.
The drain-to-source voltage (Vds) is 30V.
The continuous drain current (Ids) is 13A.
The ON-resistance (Rds(on)) is 0.011 Ohms.
The operating temperature range is -55°C to 150°C.
The IRF7413TRPBF is supplied in a SOIC-8 package and is surface mountable.