| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,712 pcs
|
1712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
874 pcs
|
874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The IRF7413TRPBF from Infineon is a single N-channel Power MOSFET that utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This characteristic, combined with fast switching speeds and a rugged device design, ensures efficient and reliable operation across various applications.
Key electrical specifications include a drain-to-source voltage (Vds) of 30V, a continuous drain current (Ids) of 13A, and a low typical ON-resistance (Rds) of 0.011 Ohms. The gate threshold voltage (Vgs(th)) is 3V. It also features a low input capacitance (Ciss) of 1800pF at 25V(Vds), a rise time of 50 ns, and a fall time of 46 ns.
The MOSFET is rated for a maximum power dissipation of 2.5W (Ta) and operates within a temperature range of -55°C to 150°C. The package is a surface-mount SOIC-8, with dimensions of 5mm in length, 3.9mm in width, and 1.5mm in height.
This component is designed for vapour phase, infrared, or wave soldering techniques. Its advanced processing and design make it suitable for a wide variety of power applications where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 30V.
The continuous drain current (Ids) is 13A.
The typical ON-resistance (Rds) is 0.011 Ohms.
The operating temperature range is -55°C to 150°C.
It is in a SOIC-8 package.
It is a surface mount device.