| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
171 pcs
|
171 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type |
The IRF630 is an N-Channel Power MOSFET designed for various switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 9A. The on-resistance (RDS(on)) is typically 0.4 Ohms at a gate-source voltage of 10V. This MOSFET also exhibits a low gate charge of 22 nC and low output capacitance of 22 pF, contributing to its fast switching capabilities.
Designed using a consolidated strip layout-based MESH OVERLAY process, the IRF630 aims to improve performance compared to standard parts. It is suitable for applications such as DC/DC converters, switch mode power supplies, DC-AC converters, uninterrupted power supplies, and motor control.
This component is intended for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRF630 is 200V.
The IRF630 has a continuous drain current (Id) of 9A.
The typical on-resistance (RDS(on)) for the IRF630 at VGS = 10V is 0.4 Ohms.
The typical gate charge for the IRF630 is 22 nC.
The IRF630 is a through-hole mounting component.
