| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34 pcs
|
34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation |
The IRF630 is an N-Channel Power MOSFET designed using a consolidated strip layout-based MESH OVERLAY process. This technology enhances performance compared to standard parts.
Key electrical specifications include a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 9A. The on-resistance (Rds(on)) is typically 0.4 Ohms at a gate-source voltage (Vgs) of 10V. It also features a maximum power dissipation (Pd) of 100W.
This MOSFET is suitable for various switching applications, including DC/DC converters, switch mode power supplies, DC-AC converters, uninterrupted power supplies, and motor control. Its typical gate charge is 22 nC, and typical input capacitance is 22 pF, contributing to its fast switching capabilities.
The IRF630 is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) for the IRF630 is 200V.
The IRF630 has a Continuous Drain Current (Id) of 9A.
The typical On-Resistance (Rds(on)) for the IRF630 is 0.4 Ohms, measured at VGS = 10V.
The maximum Power Dissipation (Pd) for the IRF630 is 100W.
The typical Gate Charge (Qg) for the IRF630 is 22nC.
The typical Input Capacitance (Ciss) for the IRF630 is 22pF.
The IRF630 is designed for Through Hole mounting.