| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation |
The Infineon SPP11N60C3HKSA1 is a high-performance N-Channel MOSFET belonging to the SIPMOS® series. It is designed for applications requiring robust switching capabilities and efficient power management.
Key electrical characteristics include a maximum gate threshold voltage of 2V at 21µA and a maximum gate-source voltage of ±20V. The device offers a maximum on-resistance of 154mOhm at 8.1A and 10V, ensuring low conduction losses. Its power dissipation is rated at a maximum of 50W (Tc).
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It features a through-hole mounting type and comes in a standard TO-220-3 package, making it suitable for various circuit designs. The input capacitance (Ciss) is a maximum of 444 pF at 25V, and the gate charge (Qg) is a maximum of 22 nC at 10V.
The Infineon SPP11N60C3HKSA1 is compliant with RoHS3 standards, indicating its adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 10.3A.
The package type is TO-220-3.
It is mounted using the through-hole method.
The operating temperature range is -55°C to 175°C.
The maximum on-resistance is 154mOhm at 8.1A, 10V.
Yes, it is RoHS3 Compliant.