| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
6,216 pcs
|
6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IPG20N04S4L-08A is a dual N-channel logic level enhancement mode Power-Transistor from the OptiMOS™-T2 family. It features a drain-source breakdown voltage of 40V and a continuous drain current of up to 20A at 25°C case temperature.
This MOSFET exhibits a low drain-source on-state resistance, with a maximum of 8.2 mΩ at VGS=10V and ID=17A. It operates over a wide temperature range from -55°C to +175°C. The device is AEC Q101 qualified and suitable for automatic optical inspection.
Packaged in a PG-TDSON-8, the IPG20N04S4L-08A is designed for applications requiring efficient power switching. Its features include high performance and reliability, making it suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
PG-TDSON-8
-55°C to +175°C
40V
20A at 25°C case temperature
7.2mΩ
54W
±16V