IPG20N04S4L-08A The Infineon IPG20N04S4L-08A is a dual N-channel OptiMOS™-T2 Power-Transistor. It offers a 40V drain-source breakdown voltage and a maximum continuous drain current of 20A.
Mfr Part #:

IPG20N04S4L-08A

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N04S4L-08A is a dual N-channel OptiMOS™-T2 Power-Transistor. It offers a 40V drain-source breakdown voltage and a maximum continuous drain current of 20A.
✓ Total Stock: 37,216 pcs
$ Price Range: $2.40

IPG20N04S4L-08A Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
6,216 pcs
6216 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 18+ On Request On Request

IPG20N04S4L-08A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Power Dissipation
Reverse Recovery Time

IPG20N04S4L-08A Description

Short technical summary and product information.

The Infineon IPG20N04S4L-08A is a dual N-channel logic level enhancement mode Power-Transistor from the OptiMOS™-T2 family. It features a drain-source breakdown voltage of 40V and a continuous drain current of up to 20A at 25°C case temperature.

 

This MOSFET exhibits a low drain-source on-state resistance, with a maximum of 8.2 mΩ at VGS=10V and ID=17A. It operates over a wide temperature range from -55°C to +175°C. The device is AEC Q101 qualified and suitable for automatic optical inspection.

 

Packaged in a PG-TDSON-8, the IPG20N04S4L-08A is designed for applications requiring efficient power switching. Its features include high performance and reliability, making it suitable for various electronic designs.

IPG20N04S4L-08A Quick Information

Product Type: Power-Transistor
Canonical Name: IPG20N04S4L-08A OptiMOS™-T2 Power-Transistor
Subcategory: N-Channel

IPG20N04S4L-08A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N04S4L-08A Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N04S4L-08A Features

  • Dual N-channel logic level enhancement mode.
  • AEC Q101 qualified for automotive use.
  • Low drain-source on-state resistance.
  • Wide operating temperature range.
  • Suitable for automatic optical inspection.

IPG20N04S4L-08A Applications

  • Power switching applications.
  • Automotive systems.
  • High-efficiency designs.
  • General purpose power management.

IPG20N04S4L-08A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of IPG20N04S4L-08A?

PG-TDSON-8

What is the operating temperature range?

-55°C to +175°C

What is the maximum drain-source voltage?

40V

What is the continuous drain current rating?

20A at 25°C case temperature

What is the typical on-state resistance at VGS=10V?

7.2mΩ

What is the maximum power dissipation?

54W

What is the gate-source voltage rating?

±16V

IPG20N04S4L-08A Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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IPG20N04S4L-08
IPG20N04S4L-08
Infineon
The Infineon IPG20N04S4L-08 is a dual N-channel MOSFET designed for power applications. It offers a 40V breakdown voltage and low on-state resistance.
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IPG20N04S4-09
IPG20N04S4-09
Infineon Technologies
The Infineon Technologies IPG20N04S4-09 is a dual N-channel MOSFET from the OptiMOS™-T2 series. It offers a 40V drain-source breakdown voltage and a maximum on-state resistance of 8.6mΩ.
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