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IPG20N04S4-09 The Infineon Technologies IPG20N04S4-09 is a dual N-channel MOSFET from the OptiMOS™-T2 series. It offers a 40V drain-source breakdown voltage and a maximum on-state resistance of 8.6mΩ.
Mfr Part #:

IPG20N04S4-09

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPG20N04S4-09 is a dual N-channel MOSFET from the OptiMOS™-T2 series. It offers a 40V drain-source breakdown voltage and a maximum on-state resistance of 8.6mΩ.
✓ Total Stock: 12,268 pcs
$ Price Range: $1.67

IPG20N04S4-09 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
6,216 pcs
On Request
6216 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
4,990 pcs
On Request
4990 pcs On Request 1 On Request On Request 21+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,062 pcs
On Request
1062 pcs On Request 1 On Request On Request 21+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPG20N04S4-09 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Operating Temperature
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IPG20N04S4-09 Description

Short technical summary and product information.

The Infineon Technologies IPG20N04S4-09 is an N-channel Power MOSFET designed for high-performance applications. It features a 40V drain-source breakdown voltage and a low on-state resistance of 8.6mΩ maximum at 17A.

 

This OptiMOS™-T2 series transistor is AEC Q101 qualified and operates at temperatures up to 175°C. It is supplied in a PG-TDSON-8-4 package suitable for surface mounting.

 

Key electrical characteristics include a continuous drain current of 20A and a gate threshold voltage typically around 3V. The device also features fast switching times with typical rise and fall times of 3ns and 10ns respectively.

IPG20N04S4-09 Quick Information

Product Type: MOSFET
Series: OptiMOS™-T2
Canonical Name: Infineon Technologies IPG20N04S4-09 N-channel MOSFET
Subcategory: Single

IPG20N04S4-09 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N04S4-09 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N04S4-09 Features

  • 40V drain-source breakdown voltage.
  • 8.6mΩ maximum drain-source on-state resistance.
  • 20A continuous drain current.
  • AEC Q101 qualified.
  • PG-TDSON-8-4 package.

IPG20N04S4-09 Applications

  • Suitable for power switching applications.
  • Ideal for automotive applications.
  • Used in high-efficiency power supplies.
  • Component in DC-DC converters.

IPG20N04S4-09 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPG20N04S4-09?

The drain-source breakdown voltage is 40V.

What is the maximum on-state resistance (Rds(on)) for the IPG20N04S4-09?

The maximum drain-source on-state resistance is 8.6 mΩ.

What is the continuous drain current rating?

The continuous drain current is 20A.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What package type is the IPG20N04S4-09 supplied in?

It is supplied in the PG-TDSON-8-4 package.

Is the IPG20N04S4-09 AEC Q101 qualified?

Yes, the IPG20N04S4-09 is AEC Q101 qualified.

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