| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,759 pcs
|
34759 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,079 pcs
|
4079 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IPG20N04S4L-08 is a high-performance N-channel power MOSFET from the OptiMOS™-T2 family. It features a dual N-channel, logic-level enhancement mode design, making it suitable for various power switching applications.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum drain-source on-state resistance as low as 8.2 mΩ at VGS=10V, ID=17A. The device operates at temperatures up to 175°C and is AEC Q101 qualified.
Packaged in a PG-TDSON-8 surface-mount package, this MOSFET is designed for efficient power management. Its features, such as 100% avalanche tested and RoHS compliance, make it a reliable choice for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.7V.
The maximum drain-source on-state resistance at VGS=10V and ID=17A is 8.2 mΩ.
The maximum operating temperature is 175°C.
It is supplied in the PG-TDSON-8 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
