| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
119 pcs
|
119 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IPD60R650CE is a MOSFET that has undergone rigorous qualification testing according to JEDEC standards, demonstrating high reliability. This product qualification report details its characteristics, based on production lots manufactured and tested under standard processes.
The device has passed various electrical stress tests, including High Temperature Reverse Bias (HTRB), High Temperature Gate Bias (HTGB), and High Humidity High Temp. Reverse Bias (H3TRB). Environmental stress tests such as Pre-conditioning, Temperature Cycling, Autoclave, and Wave solder simulation were also successfully completed.
Packaged in a PG-TO252-3 surface mount configuration, the IPD60R650CE is designed for applications requiring robust performance and quality assurance. Its qualification status indicates suitability for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Moisture Sensitivity Level (MSL) is 3.
The RoHS status is RoHS3 Compliant.
The REACH status is REACH Unaffected.
The IPD60R650CE is in a PG-TO252-3 package.
Yes, the High Temperature Reverse Bias test passed with 0 failures out of 539 samples.
Yes, the Temperature Cycling test passed with 0 failures out of 539 samples.