BSC350N20NSFD
Infineon
The Infineon BSC350N20NSFD is an N-channel Power MOSFET with a 200V drain-source voltage and a maximum on-resistance of 35mΩ. It is rated for 175°C operation.
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1,738 pcs
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1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD100N04S4-02 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 family, suitable for automotive applications. It features a drain-source breakdown voltage of 40V and a continuous drain current of 100A at 25°C with a VGS of 10V. The device boasts a low on-state resistance (Rds(on)) of typically 1.7mΩ at 100A and 10V gate-source voltage.
With an operating temperature range of -55°C to +175°C and AEC qualified, this MOSFET is built for demanding environments. It is supplied in a PG-TO252-3-313 package, designed for surface mounting.
Key electrical characteristics include a gate threshold voltage between 2V and 4V, and dynamic parameters such as input capacitance up to 9430pF and output capacitance up to 2120pF. The device also includes an integrated diode with a continuous forward current rating of 100A.
This MOSFET is RoHS compliant and meets MSL 1 standards, making it suitable for reflow soldering processes up to 260°C.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 100A.
The typical on-state resistance is 1.7mΩ at 100A and 10V.
The operating temperature range is -55°C to +175°C.
The IPD100N04S4-02 is supplied in a PG-TO252-3-313 package.
Yes, the IPD100N04S4-02 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
