| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,582 pcs
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9582 pcs | On Request | 1 | On Request | On Request | 1726+ | On Request | On Request | |
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD100N06S4-03 is an N-channel enhancement mode OptiMOS®-T2 Power MOSFET. It is AEC Q101 qualified and designed for high-performance automotive applications.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a maximum drain-source on-state resistance of 3.5 mΩ at 100A and VGS=10V. The continuous drain current is rated at 100A at both 25°C and 100°C case temperature.
This MOSFET operates at temperatures ranging from -55°C to +175°C and has a power dissipation of 150W at 25°C case temperature. It features ultra-low Rds(on) and ultra-high ID capabilities.
The device is supplied in a PG-TO252-3-11 package, suitable for surface mount applications. It is also a Green Product, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The maximum drain-source on-state resistance is 3.5 mΩ.
The continuous drain current is 100A.
The operating and storage temperature range is -55°C to +175°C.
The IPD100N06S4-03 is supplied in a PG-TO252-3-11 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.