| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,500 pcs
|
17500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,238 pcs
|
3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation |
The Infineon IPD050N10N5 is an N-channel OptiMOSTM5 power transistor with a maximum drain-source voltage of 100V. It features a very low on-resistance (RDS(on),max) of 5.0 mΩ and a continuous drain current (ID) of up to 80A at 25°C.
This MOSFET is ideal for high-frequency switching applications and synchronous rectification due to its excellent gate charge x RDS(on) product (FOM). It operates reliably at temperatures up to 175°C and is qualified according to JEDEC standards.
The component is supplied in a P-TO252-3 package, suitable for surface mounting. It is Pb-free and halogen-free, complying with RoHS and IEC61249-2-21 standards.
The maximum drain-source voltage is 100 V.
The maximum on-resistance is 5.0 mΩ.
The continuous drain current at 25°C is 80 A.
The operating temperature range is -55°C to 175°C.
The IPD050N10N5 is supplied in a P-TO252-3 package.
The IPD050N10N5 is RoHS3 Compliant.
Yes, the IPD050N10N5 is halogen-free.