SI4953DY-T1-GE3
Vishay
The Vishay Dale SI4953DY-T1-GE3 is a dual P-channel MOSFET with a 30V drain-source voltage and 3.7A continuous drain current. It features a low on-resistance of 53 mOhm at 4.9A and 10V.
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1,081 pcs
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1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB60R160C6 is an N-Channel MOSFET that offers the benefits of fast switching SJ MOSFET technology while maintaining ease of use. It is housed in a TO-263 package suitable for surface mounting.
Key electrical specifications include a maximum drain-source voltage of 600V and a maximum drain-source on-resistance of 160mΩ at a drain current of 8.1A and Vgs of 10V. The device can handle a maximum power dissipation of 176W and has a fast fall time of 8ns.
Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for various power switching applications where high efficiency and fast response are required.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum drain-source on-resistance is 160mΩ.
The maximum power dissipation is 176W.
The operating temperature range is from -55°C to 150°C.
The IPB60R160C6 is in a TO-263 package.
