| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
275 pcs
|
275 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature |
The Infineon IAUA200N04S5N010 is a high-performance N-channel power MOSFET from the OptiMOS™ 5 series, specifically engineered for demanding automotive applications. This device operates in enhancement mode with a normal level gate.
Key electrical specifications include a maximum drain-source voltage (VDS) of 40V and a maximum continuous drain current (ID) of 200A (chip limited). The on-resistance (RDS(on)) is specified at a maximum of 0.94 mΩ when the gate-source voltage (VGS) is 10V.
Designed for robustness and reliability, this MOSFET is qualified beyond AEC-Q101 and supports an operating temperature of up to 175°C. It is also 100% avalanche tested and features MSL3 rating up to 260°C peak reflow.
The IAUA200N04S5N010 is supplied in the PG-HSOF-5-1 package, suitable for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
200A (chip limited).
0.94mOhm at VGS=10V.
175°C.
PG-HSOF-5-1 surface mount package.
Surface mount.
