| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
288 pcs
|
288 pcs | On Request | 1 | On Request | On Request | 114 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The HUF76129S3S is an N-Channel power MOSFET manufactured using the UltraFET process, designed for high efficiency applications. It features a logic level gate drive and a low on-resistance of 0.016 Ohm at a drain current of 56A.
This device is rated for a maximum drain-source voltage of 30V and a continuous drain current of 56A at 25°C. It is capable of withstanding high energy in the avalanche mode and exhibits very low reverse recovery time and stored charge. The MOSFET is suitable for use in switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The HUF76129S3S comes in a TO-263AB surface mount package. It is also available in tape and reel packaging for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 56A at 25°C with a VGS of 10V.
The on-resistance is 0.016 Ohm.
It supports logic level gate drive.
The HUF76129S3S is available in a TO-263AB package.
