| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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203 pcs
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203 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
140 pcs
|
140 pcs | On Request | 1 | On Request | On Request | 09+08+ | On Request | On Request |
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| Manufacturer Name | |
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The Infineon Technologies H20R1202 is a Reverse Conducting Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications such as inductive cooking and general soft switching. It utilizes Trench and Fieldstop technology for enhanced ruggedness and tight parameter distribution.
Key electrical specifications include a 1200V collector-emitter voltage (VCE) and a continuous DC collector current (IC) of 20A at 100°C case temperature, with a peak pulsed collector current of 60A. The device also features a powerful monolithic body diode with a low forward voltage. The operating junction temperature ranges from -40°C to +175°C.
Packaged in a PG-TO-247-3-21, this IGBT is suitable for through-hole mounting. Its NPT technology facilitates easy parallel switching due to a positive temperature coefficient in VCE(sat). The component is RoHS compliant and offers low EMI.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 1200V.
The H20R1202 is available in a PG-TO-247-3-21 package.
The operating junction temperature range is -40°C to +175°C.
The maximum DC collector current at 25°C is 40A.
The typical collector-emitter saturation voltage is 1.55V at VGE=15V, IC=20A, Tj=25°C.
The maximum power dissipation is 330W at TC=25°C.
The typical gate-emitter threshold voltage is 5.8V at IC=0.5mA, VCE=VGE.
