| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,149 pcs
|
1149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IHW30N160R2 is a TrenchStop® Reverse Conducting (RC-)IGBT designed for high-voltage applications up to 1600V. It features a powerful monolithic body diode with a very low forward voltage, capable of clamping negative voltages.
This IGBT utilizes Trench and Fieldstop technology, offering tight parameter distribution, high ruggedness, and temperature-stable behavior. The NPT technology ensures easy parallel switching capability due to a positive temperature coefficient in VCE(sat). Key electrical specifications include a 1600V collector-emitter voltage, 30A DC collector current at 100°C, and a typical saturation voltage of 1.8V at 25°C.
Packaged in a PG-TO-247-3, this component is suitable for applications requiring robust performance and low EMI. It operates within a junction temperature range of -40°C to +175°C and is RoHS compliant.
Applications include inductive cooking and other soft switching scenarios where high voltage and current handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1600V.
The continuous collector current at 100°C is 30A.
The typical gate-emitter threshold voltage ranges from 5.1V to 6.4V.
The package type is PG-TO-247-3.
The operating junction temperature range is -40°C to +175°C.