IRFB3306PBF The Infineon IRFB3306PBF is an N-channel MOSFET designed for high-efficiency synchronous rectification and high-speed power switching. It features a 60V drain-source voltage and a low on-resistance.
Mfr Part #:

IRFB3306PBF

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IRFB3306PBF is an N-channel MOSFET designed for high-efficiency synchronous rectification and high-speed power switching. It features a 60V drain-source voltage and a low on-resistance.
✓ Total Stock: 44,423 pcs
$ Price Range: $2.54

IRFB3306PBF Available from 4 distributors

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✓ Non-Authorised
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29,720 pcs
29720 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8,424 pcs
8424 pcs On Request 1 On Request On Request 21+ On Request On Request
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3,250 pcs
3250 pcs On Request 1 On Request On Request On Request On Request On Request
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3,029 pcs
3029 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB3306PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
Storage Temperature

IRFB3306PBF Description

Short technical summary and product information.

The Infineon IRFB3306PBF is a HEXFET power MOSFET with an N-channel configuration. It is designed for applications requiring high efficiency and high-speed power switching, such as synchronous rectification in SMPS and uninterruptible power supplies.

 

Key electrical characteristics include a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 160A at 25°C (silicon limited). The on-resistance (RDS(on)) is typically 3.3mΩ at 10V gate-source voltage and 80A drain current, with a maximum of 4.2mΩ. The device can handle pulsed drain currents up to 620A and has a maximum power dissipation of 300W at 25°C.

 

This MOSFET operates within a junction temperature range of -55°C to +175°C. It is available in a TO-220-3 package, suitable for through-hole mounting. The IRFB3306PBF is RoHS compliant, lead-free, and halogen-free, making it suitable for environmentally conscious designs.

 

Applications include high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-frequency circuits requiring hard switching.

IRFB3306PBF Quick Information

Product Type: MOSFET
Canonical Name: Infineon IRFB3306PBF N-channel MOSFET
Subcategory: N-Channel

IRFB3306PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB3306PBF Estimated Pricing

Qty Low High
1+ $2.54 $2.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB3306PBF Features

  • 60V drain-source breakdown voltage.
  • 160A continuous drain current.
  • Low 3.3mOhm typical on-resistance.
  • Lead-free and halogen-free.
  • TO-220-3 through-hole package.

IRFB3306PBF Applications

  • High efficiency synchronous rectification.
  • SMPS and UPS applications.
  • High speed power switching.
  • Hard switched circuits.

IRFB3306PBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IRFB3306PBF?

The maximum drain-source voltage is 60V.

What is the typical on-resistance of the IRFB3306PBF?

The typical on-resistance is 3.3mΩ at a gate-source voltage of 10V and a drain current of 80A.

What is the continuous drain current rating for the IRFB3306PBF?

The continuous drain current is 160A at 25°C (silicon limited) and 110A at 100°C (silicon limited).

What is the operating temperature range for the IRFB3306PBF?

The operating junction and storage temperature range is -55°C to +175°C.

Is the IRFB3306PBF RoHS compliant?

Yes, the IRFB3306PBF is RoHS3 Compliant.

What package type is the IRFB3306PBF supplied in?

The IRFB3306PBF is supplied in a TO-220-3 package.

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