| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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136 pcs
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136 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FPQ3725 is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose applications requiring moderate power handling and switching speeds.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 30V, a maximum collector current (Ic) of 1A, and a maximum collector power dissipation (Pc) of 1.2W. The transistor features a transition frequency (ft) of 150MHz and a minimum forward current transfer ratio (hFE) of 40.
This component is supplied in a DIP package, suitable for through-hole mounting. The TO116-4 package designation indicates its specific form factor. The FPQ3725 is a reliable choice for various electronic circuits where its specifications meet the design requirements.
Environmental compliance data indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Uce) for the FPQ3725 transistor is 30V.
The maximum collector current (Ic max) for the FPQ3725 transistor is 1A.
The transition frequency (ft) of the FPQ3725 transistor is 150MHz.
The FPQ3725 transistor is available in a DIP package, specifically TO116-4.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.