SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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3,550 pcs
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3550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE13009F is a triple diffused NPN transistor manufactured by On Semiconductor, suitable for switching regulator, high voltage switching, and high-speed DC-DC converter applications. It features excellent switching times with a typical turn-on time of 1.1 µS and a fall time of 0.7 µS at IC=8A.
Key electrical characteristics include a high collector-base voltage (VCBO) of 700V and a collector-emitter voltage (VCEO) of 400V. The device can handle a continuous collector current (IC) of 12A and a pulse collector current (ICP) of 24A. Its DC current gain (hFE) ranges from 14 to 28 at IC=5A.
Thermal specifications include a maximum collector power dissipation (PC) of 50W at 25°C and a maximum junction temperature (Tj) of 150°C. The operating temperature range is from -55°C to 150°C. The transistor is typically housed in a through-hole package.
This component is designed for applications requiring robust high-voltage switching capabilities, offering reliable performance in demanding electronic circuits.
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| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage is 700V.
The maximum collector-emitter voltage is 400V.
The maximum collector current is 12A DC and 24A pulse.
The maximum junction temperature is 150°C.
It is mounted in a through-hole package.
Yes, it is RoHS3 compliant.
