| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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969 pcs
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969 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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The Sanyo Denki 2SA1770 is a PNP Epitaxial Planar Silicon Transistor engineered for high-voltage switching applications. It utilizes the MBIT process and provides a high breakdown voltage along with a large current capacity.
Key electrical specifications include a collector-emitter voltage (Vceo) of up to 180V and a continuous collector current (Ic) of 1.5A. The transistor also features a gain bandwidth product (fT) of 120MHz and a low collector-emitter saturation voltage (Vce(sat)) of 0.5V at 500mA.
Packaged in a TO-92 through-hole configuration, the 2SA1770 is suitable for various electronic circuits requiring reliable high-voltage switching. Its operating temperature range is up to 150°C junction temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the 2SA1770 is 180V.
The maximum continuous collector current (Ic) for the 2SA1770 is 1.5A.
The gain bandwidth product (fT) of the 2SA1770 is a minimum of 120MHz.
The 2SA1770 has a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C.
The 2SA1770 is available in a TO-92 package.