| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature |
The FPD1500SOT89 from ICL is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It is designed for high-intercept-point applications and features a 0.25 x 1500 μm Schottky barrier Gate.
Key electrical specifications include a typical output power (P1dB) of 27.5 dBm, a small-signal gain (SSG) of 17 dB, and a noise figure (NF) of 1.2 dB, all measured at 1850 MHz. The device also boasts a typical output IP3 of 42 dBm and a power-added efficiency (PAE) of 50% at P1dB.
This pHEMT is suitable for driver or output stages in wireless infrastructure systems such as PCS/Cellular base stations, WLL, and WLAN. It is available in a SOT-89 package suitable for surface mounting.
Absolute maximum ratings include a drain-source voltage of 8V and a gate-source voltage of -3V. The channel operating temperature can reach up to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical P1dB is 27.5 dBm at VDS = 5.0V and IDS = 50% IDSS, measured at 1850 MHz.
The typical small-signal gain is 17 dB at VDS = 5.0V and IDS = 50% IDSS.
The typical PAE is 50% at P1dB output power, VDS = 5.0V, and IDS = 50% IDSS.
The typical noise figure is 1.2 dB at VDS = 5.0V and IDS = 50% IDSS.
The typical OIP3 is 42 dBm when matched for best IP3 at 50% IDSS.
The maximum VDS is 8V with -3V < VGS < 0V.
The FPD1500SOT89 is available in a surface-mount SOT-89 package.