PMPB100XPEA
NXP Semiconductors
The PMPB100XPEA is a P-channel Trench MOSFET from NXP Semiconductors. It offers a 20V drain-source voltage and a typical on-state resistance of 100mΩ.
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fujitsu Semiconductor FHC40LG is a Super High Electron Mobility Transistor (SuperHEMT) designed for general-purpose, ultra-low noise, and high-gain amplifier applications in the 2-12GHz frequency range. This device is packaged in a cost-effective, low-parasitic, hermetically sealed metal-ceramic package, suitable for high-volume telecommunication, DBS, TVRO, and VSAT applications.
Key electrical characteristics include a typical noise figure of 0.3dB at 4GHz and a typical associated gain of 15.5dB at 4GHz. The transistor has a gate length (Lg) of less than or equal to 0.15µm and a gate width (Wg) of 280µm. Absolute maximum ratings specify a drain-source voltage of 3.5V and a gate-source voltage of -3.0V.
The FHC40LG is housed in a Ceramic Microstrip (SMT) package, designed for surface mounting. It is available on tape and reel, facilitating high-volume automated assembly processes. Gold gate metallization ensures high reliability for demanding applications.
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| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure is 0.3dB at 4GHz.
The typical associated gain is 15.5dB at 4GHz.
The FHC40LG is intended for the 2-12GHz frequency range.
The FHC40LG is available in a Ceramic Microstrip (SMT) package.
The absolute maximum drain-source voltage is 3.5V, and the gate-source voltage is -3.0V.
