| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Storage Temperature |
The D44H8 is an NPN power transistor manufactured using low voltage multi epitaxial planar technology. It is designed for general purpose linear and switching applications, including power amplifiers and switching circuits.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 10A. The device also offers a low collector-emitter saturation voltage (VCE(sat)) of 1V at 8A and a DC current gain (hFE) of 60 minimum at 2A.
This transistor is housed in a TO-220 package, suitable for through-hole mounting. The thermal resistance junction-to-case (RthJC) is 2.5 °C/W, and junction-to-ambient (RthJA) is 62.5 °C/W, with a total power dissipation (PTOT) of 50W at 25°C case temperature.
Storage temperature ranges from -55°C to 150°C, with a maximum operating junction temperature of 150°C. The D44H8 is manufactured in a low voltage planar technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the D44H8 is 60V.
The maximum continuous collector current (IC) for the D44H8 is 10A.
The D44H8 transistor is supplied in a TO-220 package.
The D44H8 is intended for general purpose linear and switching applications, including power amplifiers and switching circuits.
The storage temperature range for the D44H8 is -55 to 150°C.