| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
336 pcs
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336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Storage Temperature |
The BYV26B is a diode designed for RF applications, manufactured by NXP Semiconductors. It features a maximum repetitive peak reverse voltage of 400V and a maximum continuous reverse voltage of 400V. The diode has an average forward current of 1A at 85°C and a forward voltage of up to 1.3V at 1A. Its package type is SOD57, suitable for through-hole mounting. The device also has a maximum reverse recovery time of 75 ns and a reverse avalanche breakdown voltage of 500V. It is rated for storage and junction temperatures from -65°C to +175°C. The diode is RoHS3 compliant and has a moisture sensitivity level of 1, although these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 400 V.
The maximum average forward current is 1 A.
The package type is SOD57.
The reverse avalanche breakdown voltage is 500 V.
The maximum reverse recovery time is 75 ns.