| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 | |
|
4,179 pcs
|
4179 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The FHX13X is a Super High Electron Mobility Transistor (SuperHEMT) chip from Sumitomo Electric Industries, suitable for general-purpose, ultra-low noise, and high-gain amplifiers operating in the 2-18GHz frequency range. It is well-suited for telecommunication, DBS, TVRO, VSAT, and other low-noise applications.
Key electrical characteristics include a typical noise figure of 0.45dB and an associated gain of 13.0dB at 12GHz. The device has a drain-source voltage rating of 3.5V and a gate-source voltage rating of -3.0V. The maximum total power dissipation is 180mW when mounted on an Al2O3 board.
This component is provided as a chip package, requiring a hermetically sealed environment for optimal performance and reliability. The absolute maximum ratings include a storage temperature range of -65 to +175°C and a channel temperature of 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure of the FHX13X at 12GHz is 0.45dB.
The associated gain of the FHX13X at 12GHz is 13dB.
The absolute maximum drain-source voltage is 3.5V, and the gate-source voltage is -3.0V.
The total power dissipation is 180mW when mounted on an Al2O3 board.
The storage temperature range is -65 to +175°C.
The FHX13X is a chip package.