Mfr Part #:

FHX13X

The FHX13X is a GaAs HEMT chip from Sumitomo Electric Industries, designed for ultra-low noise and high gain amplifiers. It offers a typical noise figure of 0.45dB at 12GHz.

✓ Total Stock: 14,179 pcs

$ Price Range: $0.99

FHX13X Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-06-29 21:33:16
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,179 pcs On Request	4179 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FHX13X Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Sumitomo Electric Industries
Noise Figure	0.45 dB
Storage Temperature	-65 to +175 °C
Thermal Resistance	220 °C/W

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FHX13X Description

Short technical summary and product information.

The FHX13X is a Super High Electron Mobility Transistor (SuperHEMT) chip from Sumitomo Electric Industries, suitable for general-purpose, ultra-low noise, and high-gain amplifiers operating in the 2-18GHz frequency range. It is well-suited for telecommunication, DBS, TVRO, VSAT, and other low-noise applications.

Key electrical characteristics include a typical noise figure of 0.45dB and an associated gain of 13.0dB at 12GHz. The device has a drain-source voltage rating of 3.5V and a gate-source voltage rating of -3.0V. The maximum total power dissipation is 180mW when mounted on an Al2O3 board.

This component is provided as a chip package, requiring a hermetically sealed environment for optimal performance and reliability. The absolute maximum ratings include a storage temperature range of -65 to +175°C and a channel temperature of 175°C.

FHX13X Quick Information

Product Type: GaAs HEMT Chip

Canonical Name: FHX13X GaAs HEMT Chip

Subcategory: GaAs HEMT

FHX13X Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FHX13X Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

FHX13X Features

Ultra-low noise figure of 0.45dB at 12GHz.
High associated gain of 13.0dB at 12GHz.
Designed for 2-18GHz frequency range.
Suitable for DBS LNB applications.
Chip package for specialized integration.

FHX13X Applications

Used in telecommunication systems.
Ideal for DBS and TVRO receivers.
Suitable for VSAT applications.
Applicable to other low-noise designs.
High-gain amplifier circuits.

FHX13X FAQs

6 frequently asked questions generated from this part’s specifications.

What is the typical noise figure of the FHX13X at 12GHz?

The typical noise figure of the FHX13X at 12GHz is 0.45dB.

What is the associated gain of the FHX13X at 12GHz?

The associated gain of the FHX13X at 12GHz is 13dB.

What are the absolute maximum ratings for drain-source and gate-source voltage?

The absolute maximum drain-source voltage is 3.5V, and the gate-source voltage is -3.0V.

What is the total power dissipation for the FHX13X?

The total power dissipation is 180mW when mounted on an Al2O3 board.

What is the storage temperature range for this component?

The storage temperature range is -65 to +175°C.

What is the package type for the FHX13X?

The FHX13X is a chip package.