| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The BUZ73 is an N-Channel MOSFET produced by Inchange Semiconductor. This component is designed for applications requiring a breakdown voltage of up to 200V and can handle a maximum power dissipation of 40W. Its drain-source resistance is a minimum of 600mΩ, and it operates at a maximum temperature of 150°C.
With 3 terminals, the BUZ73 is suitable for various power switching and amplification tasks. While specific application details are not provided, MOSFETs of this nature are commonly used in power supplies, motor control, and general-purpose switching circuits. The component's specifications suggest it is a robust option for moderate power applications.
Further details regarding package type, mounting, and specific electrical characteristics would typically be found in the manufacturer's datasheet. However, based on the available information, the BUZ73 presents a solid set of parameters for its intended use.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUZ73 MOSFET has a minimum breakdown voltage of 200V.
The maximum power dissipation for the BUZ73 is 40W.
The minimum drain-source resistance of the BUZ73 is 600mΩ.
The maximum operating temperature for the BUZ73 is 150°C.
The BUZ73 has 3 terminals.
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