| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Technology | |
| Transistor Type |
The BUZ45A from HAR is an N-Channel enhancement mode silicon gate power field-effect transistor. It is designed for applications such as switching regulators, switching converters, motor drivers, and relays.
Key electrical specifications include a drain-source voltage of 500V and a continuous drain current of 8.3A. The on-resistance (rDS(ON)) is rated at 0.800 ohms. This MOSFET is built using Metal-oxide Semiconductor FET technology.
This component is suitable for various power switching applications where high voltage and current handling are required. Its characteristics make it a reliable choice for efficient power conversion and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 500V.
The continuous drain current is 8.3A.
The on-resistance is 0.8 ohms.
The BUZ45A is an N-Channel MOSFET.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.