| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Supertex TN0520N2 is a low-threshold, N-Channel enhancement-mode vertical DMOS FET. It is designed for small signal applications and features a 200V drain-source voltage rating and a continuous drain current of 0.7A.
This MOSFET utilizes silicon Metal-oxide Semiconductor FET technology. It has a maximum drain-source on-state resistance of 1.5 Ohm at 0.7A and a gate-source threshold voltage of 2V. The device is a single-element transistor.
Packaged in a TO-39 cylindrical case with 3 terminals, the TN0520N2 is suitable for through-hole mounting. Its specifications make it a component for various electronic circuits requiring a reliable N-channel FET.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating for the TN0520N2 is 200V.
The continuous drain current for the TN0520N2 is 0.7A.
The TN0520N2 is supplied in a TO-39 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.