| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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376 pcs
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376 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Power Dissipation | |
| SVHC Present | |
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| Transistor Type |
The Infineon Technologies BSC067N06LSG is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 100A at 25C. The on-resistance (Rds(on)) is specified as a maximum of 67 mOhm at Vgs = 10V and a typical of 53 mOhm under the same conditions. For lower gate drive voltages, the Rds(on) is a maximum of 75 mOhm at Vgs = 4.5V, with a typical value of 60 mOhm. The gate-source threshold voltage (Vgs(th)) is typically 2.2V, with a maximum of 2.5V and a minimum of 1.8V. This MOSFET has a maximum continuous power dissipation of 150W at 25C. It is housed in a surface mount TO-263 package and operates within a temperature range of -55C to 150C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 100A.
The maximum on-resistance is 67 mOhm.
The typical on-resistance is 60 mOhm.
The typical gate-source threshold voltage is 2.2V.
It is supplied in a TO-263 (2 leads + tab) surface mount package.
The operating temperature range is -55C to 150C.