DistyParts Icon
BUZ272 The BUZ272 is a power transistor from Siemens Semiconductor Group. It offers a breakdown voltage of 100V and a maximum power dissipation of 40W.
Mfr Part #:

BUZ272

Available from 1 distributors
Mfr Name: N-A
N-A
The BUZ272 is a power transistor from Siemens Semiconductor Group. It offers a breakdown voltage of 100V and a maximum power dissipation of 40W.
✓ Total Stock: 63 pcs
$ Price Range: $0.99

BUZ272 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
ACK ELEKTRONIK ✓
Non-Authorised Inventory information
63 pcs
On Request
63 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BUZ272 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Operating Temperature
Power Dissipation
View Similar Products (0)

BUZ272 Description

Short technical summary and product information.

The BUZ272 is a power transistor manufactured by Siemens Semiconductor Group. This component is designed for various electronic applications requiring robust power handling capabilities.

 

Key electrical specifications include a minimum breakdown voltage of 100V and a maximum power dissipation of 40W. The operating temperature range extends up to 150°C, making it suitable for demanding environments. The transistor has a drain-source resistance of 300mΩ minimum.

 

With 3 terminals, the BUZ272 is a versatile component. Its specifications suggest suitability for power switching and amplification circuits where reliability and performance are critical. Further details on specific applications and integration can be found in the manufacturer's documentation.

BUZ272 Quick Information

Product Type: Power Transistor
Canonical Name: BUZ272 Power Transistor
Subcategory: Transistors - FETs, MOSFETs - Arrays

BUZ272 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUZ272 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUZ272 Features

  • High breakdown voltage of 100V
  • Minimum Drain-Source Resistance of 300 mOhm
  • Maximum Power Dissipation of 40W
  • Operates up to 150°C temperature
  • Three-terminal package

BUZ272 Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for motor control modules
  • Applicable in power supply regulation

BUZ272 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BUZ272?

The minimum breakdown voltage for the BUZ272 is 100V.

What is the maximum power dissipation of the BUZ272?

The maximum power dissipation for the BUZ272 is 40W.

What is the maximum operating temperature for the BUZ272?

The BUZ272 can operate at temperatures up to 150°C.

What is the minimum drain-source resistance of the BUZ272?

The minimum drain-source resistance of the BUZ272 is 300mΩ.

How many terminals does the BUZ272 have?

The BUZ272 has 3 terminals.

BUZ272 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
TK13A65U
TK13A65U
Toshiba
The Toshiba TK13A65U is an N-Channel MOSFET designed for high voltage applications. It features a 650V drain-to-source voltage and a continuous drain current of 13A.
View Part
TK8A55DA(STA4
TK8A55DA(STA4
Toshiba
The Toshiba TK8A55DA(STA4,Q,M) is an N-Channel MOSFET with a 550V drain-source voltage. It offers a continuous drain current of 7.5A and is housed in a TO-220SIS package.
View Part
2SK2545
2SK2545
Toshiba
The Toshiba 2SK2545 is an N-Channel MOSFET designed for power applications. It features a 600V Drain-Source Voltage and a maximum power dissipation of 40W.
View Part
TK13A65U(STA4,Q)
TK13A65U(STA4,Q)
Toshiba
The Toshiba TK13A65U(STA4,Q) is an N-Channel MOSFET with a 650V drain-source voltage and 13A continuous drain current. It is housed in a TO-220SIS package.
View Part
Home

Categories