BD244C/BD243C
On Semiconductor
The BD243CG is an NPN bipolar junction transistor from onsemi, designed for switching and amplifier applications. It offers a 100V collector-emitter voltage and 6A collector current.
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUX85 is an NPN silicon power transistor manufactured by NXP Semiconductors, suitable for switching applications. This component features a maximum collector-emitter breakdown voltage of 450V and can handle a continuous collector current of up to 2A. Its maximum power dissipation is rated at 50W.
The transistor exhibits a Vce saturation voltage of 1V at 200mA collector current and 1A base current, with a minimum DC current gain (hFE) of 30. The transition frequency is specified at 4MHz, indicating its suitability for moderate frequency switching tasks.
Packaged in a TO-220AB through-hole configuration, the BUX85 is designed for easy mounting on printed circuit boards. It has a moisture sensitivity level of 1, indicating it is not particularly sensitive to ambient moisture.
This component is RoHS3 compliant and REACH unaffected. Its primary application is in power switching circuits where its voltage and current ratings are beneficial.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the BUX85 is 2A.
The maximum collector-emitter breakdown voltage for the BUX85 is 450V.
The maximum power dissipation for the BUX85 is 50W.
The Vce saturation voltage for the BUX85 is 1V at 200mA collector current and 1A base current.
The transition frequency for the BUX85 is 4MHz.
The minimum DC current gain (hFE) for the BUX85 is 30.
The BUX85 is supplied in a TO-220AB package for through-hole mounting.
